The Second Generation of Integrated Stack Capacitor (ISC) for Power Integrity Improvement

Capacitors are the one of the key parts in a wide variety of electronic applications, such as radio-frequency (RF) and mixed-signal integrated circuits (ICs), to achieve high performance. In this paper, the 2
^nd
generation of integrated stack capacitor (ISC GEN-2) was developed as a decoupling capacitor and characterized by using a simulation, capacitance (C
i
), leakage current and WLR (Wafer Level Reliability) results. The capacitance of ISC GEN-2 is above 1,000 fF/um
²
and approximately 3 times higher than the 1
^st
generation of ISC (ISC GEN-1). With an improved capacitance on ISC GEN-2, it showed lower voltage noise, ~0.66x, compared to LICC (Low Inductance Chip Capacitor) at a given circuit simulation. The WLR results showed to meet the desired requirements.