Effects of Ferro-thickness and Temperature on Electrical Performance of Si:HfO2 based NC-FinFET

In this paper, the temperature effect on Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structured negative capacitance fin field effect transistor (NC-FinFET) Silicon doped HfO2 (Si:HfO2) is analyzed. The simulation is carried out in Sentaurus TCAD and various characteristics are extracted. With the incorporation of FE layer, the I
ON
is increased by 1.5 times compared to baseline FinFET and SS is achieved as 53 mV/dec. The device provides a high transconductance (g
m
) of 5 mS at V
gs
= 0.95 V. These parameters viz. SS, I
ON
and g
m
etc. has been analyzed with varying temperature (250 K - 350 K with step 50 K).