Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation

In this work, we investigate the surge current ruggedness and role of the conductivity modulation in the vertical GaN-on-GaN PiN diode. With varying
$t_{\text{surge}}$
(5 µs~10 ms) and [peak Up to 10 kA/cm
²
, the evolvement of surge current capability of vertical GaN-on-GaN PiN diode has been systematically investigated. Owing to the desirable photon- and thermally-enhanced conductivity modulation in the direct-bandgap GaN, a high surge energy density of
$282 J/cm^{2}$
has been realized in the vertical GaN-on-GaN PiN diode, showing great potential of vertical GaN-on-GaN PiN diodes for high power electronic applications.