A 15V operated Shallow Trench IGBT(ST-IGBT) fabricated by low temperature process and optimized for 12inch wafers

In this paper, we propose shallow trench IGBT (ST -IGBT) and its fabrication process. It is designed for 15V of gate operation, as is the same as conventional IGBTs. The cell is consist of shallow trench gate MOS structure and shallow doping layers, formed by ion implantation and RTA (Rapid Thermal Anneal). The edge termination structure is composed by many shallow FLRs. The optimized cell design reduces V ce(sat) by 0.2V, compared with conventional IGBTs.