A 0.5-6 GHz GaN HEMT LNA for EW Applications

This paper presents the design and simulation results of a 0.5 - 6 GHz low noise amplifier (LNA) using a discrete off-the-shelf GaN HEMT transistor. The LNA comprises of a single-stage Common-Source topology with series inductive source degeneration and an R-C feedback network. The simulation results show a flat gain response at 8 dB with less than 0.5 dB variation throughout the operation band. The amplifier also presents very good linearity with a mid-band OPldB of +27.45dBm and an OIP3 of more than 35 dBm.