Specific DNA Detection of Candida Albicans Using AlGaN/GaN High Electron Mobility Transistor

Candidemia, primarily caused by Candida Albicans, is a vital cause of ICU patients’ morbidity and mortality. To improve early diagnosis of Candidemia, an economic detection method with better accuracy, sensitivity and efficiency is required. Meanwhile, the emergence of the third generation semiconductors is providing new opportunities in biological detections. AlGaN/GaN High Electron Mobility Transistor (HEMT), for illustration, is a well-known representation of the third generation semiconductor devices, which is famous for its speed and sensitivity, while owning the precious feature of bio-friendly. In this study, we combined the DNA detection of Candida Albicans and AlGaN/GaN HEMT. With immobilization of specific probe DNA on sensing area, we realized a minimum detectable concentration of 0.5 $\mu$Mo1/m1, with excellent repeatability and stability, while possessing reliable clinical specificity among the Candida genus. Our research has proved that, it is practical to use GaN HEMT in the DNA detection of pathogenic fungi, like Candida Albicans.