Performance Evaluation of Buried Gate Oxide based Negative Capacitance FinFETs

In the era of shrinking technology nodes and gate lengths, Negative Capacitance Fin Field-Effect Transistors (NC-FinFET) hold a one-sided dominance over the conventional structures, due to their superior gate electrostatics. However, the advancement of NC-FinFETs has been made possible by the enhanced device performance in terms of numerous engineering techniques. The following work proposes a novel NC-FinFET architecture in which the depth of the interfacial gate oxide (IGO) layer has been modified and examined with the help of $T C A D$ Sentaurus. Based on several short channel parameters, we have shown a comparison between the standard NC-FinFET, lowk spacer based NC-FinFET, and the projected FE-DE spacer NC-FinFET, by modifying the IGO thickness inside the channel. Additionally, we have shown the effect of side IGO thickness to realize the best configuration with the entire IGO depth inside the channel. In conclusion, this principle of buried IGO thickness seems motivating for low-power electronics.