Semi-empirical modeling of rectangular triple gate FinFET incorporating the effect of 2D quantum confinement

In this paper, the effect of configurational confinement of charge carriers in super thin body of undoped (or weakly doped) FinFET, is considered owing to development of a semi-empirical quantum model. Some significant short channel effects are also incorporated in our proposed model to characterize the device performance across specific range of operating voltages. Furthermore, the modeled curves are validated with respect to calibrated 3D simulation in ATLAS Silvaco.