Characterization and thermal steadiness of trenched stepped gate SON MOSFET for future CMOS devices

This paper presents a systematic description of trenched trapezoidal stepped gate SON MOS structure embedded with a workfunction variation technique to intensify the carrier transport efficiency, to enhance device shortchannel effects (SCEs). The simulation of the proposed, workfunction modulated stepped trapezoidal stack trenched gate (WMS-TSTG) SON MOSFET has been executed through the TCAD device simulator. A fair assessment has been made between rectangular and trapezoidal SON MOS transistors to comprehend the vitality of the projected structure. The WMSTSTG SON MOSFET is also capable of suppressing the selfheating effect by ensuring better carrier mobility as compared to the graded workfunction (GW) rectangular recessed stacked gate (RRSG) SON MOSFET.