AlGaN/GaN based HEMT with AIN Spacer And Nucleation Layer For High Power Application

In the past many years, all the researchers have worked in semiconductor device design, which will be compatible with recent technology for betterment. To fulfill the demands, some inventors have introduced new semiconductor materials namely AlGaN/GaN material and structure. HEMT (High-Electron-Mobility-Transistor) has a good command to handle high power with high-frequency applications because AlGaN/GaN have the best electrical characteristics over AlGaAs/GaAs - based HEMT. In this research work, the addition of an AIN spacer and Nucleation layer with AlgaN cap, GaN barrier AlGaN /GaN based HEMT with AlGaN channel is proposed. Electrical characteristics are analyzed DC Analysis- Drain Current (0.9A/mm), Ionization Effect (0.04(h+/cm)), Electron Concentration (Maximum 20 eV and varies according to the channel position), Change in Potential is from -SV to 2V with respect to the channel position is also observed. Maximum Channel Temperature 355 K is obtained when drain voltage is increased till 10V, and Trans-conductance is 0.25 (S/mm) at gate voltage of -1V. In accordance with the AC Analysis-Maximum Unilateral Power Gain is 140 dB, Y parameters at different operating frequencies are obtained. Gate-Source Capacitance (CGSMAX =1.75× 1$0^{-11}$ F/mm), Gate-Drain Capacitance (CGDMAX =5× 1$0^{-12}$F/mm) and 10× 10
⁵
V/mm amount of Electric Field is observed are investigated. Silvaco TCAD simulation software is used for the simulation of the proposed HEMT device. Proposed device can be operated at high power applications which are operated on high temperature.