Study of SiC trench MOSFET switching performance

This work studies the static-state and dynamic switch performance of trench profile with thick bottom oxide (TBOX) in SiC trench MOSFET. With thicker bottom oxide thickness, electric field at the bottom of SiC trench reduced and have the same threshold voltage, but Ron, sp for SiC MOSFET with
$0.5\ \mu\mathrm{m}$
TBOX slightly 3.2% increase than that without TBOX. Then, SiC MOSFET with
$0.5\ \mu\mathrm{m}$
TBOX has lower gate-to-drain capacitance (Cgd) and gate-to-source capacitance (Cgs) with 30.3% and 7.3% reduction, respectively. For dynamic switch performance, both power consumption and switch performance reduce by thicker TBOX thickness.