Stacked Two Ge0.98Si0.02 Nanowire nFETs with High-$\kappa$ Dielectrics Featuring High ION per Footprint of $4800\ \mu\mathrm{A}/\mu\mathrm{m}$ at $\mathrm{V}_{\text{OV}}=\mathrm{V}_{\text{DS}}=0.5\mathrm{V}$

The peak dielectric constant of 47 is obtained with Hf
0.2
Zr
0.8
O
2
. The Hf
0.2
Zr
0.8
O
2
is used in the gate stack on the high mobility Ge
0.98
Si
0.02
channel to significantly enhance the drive current by taking advantage of the high dielectric constant. The stacked two Ge
0.98
Si
0.02
gate-all-around nanowires can have high ION per footprint of
$4800\ \mu\mathrm{A}/\mu\mathrm{m}$
at
$\mathrm{V}_{\text{OV}}=\mathrm{V}_{\text{DS}}=0.5\mathrm{V}$
. The thermal budget is as low as 450 °C.