Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material

In this work, InGaAs ferroelectric FET (FE-FET) is shown to have superior performance than baseline MOSFET in terms of DC, short-channel effects, high-frequency and power efficiency by using TCAD simulation. This phenomenon can be attributed to the higher electron velocity, higher device transconductance and intensified gate control in FE-FET due to the amplified effect. Though thicker ferroelectric leads to better DC properties, the optimum ferro-thickness for high-frequency applications is around 7 nm due to the trade-off between electron velocity and parasitic capacitance. Besides, the applied drain-to-source voltage (
$\mathrm{V}_{\text{DS}}$
) is found to be 21 % lower than baseline device with identical cut-off frequency (
$f_{\mathrm{T}}$
).