Analog/RF Performance Evaluation of InAs-InGaAs-GAA-TFET

Future high-speed and low-power systems may benefit from CMOS and tunneling-FETs (TFETs) having good mobility III-V networks. Due to the lack of scaling issues, a TFET can replace a MOSFET. Transfer characteristics, analog/RF performance, and output characteristics of a proposed Hetro gate dielectric (HD)-InAs-InGaAs gate-all-around (GAA)-TFET are investigated. The ON-current value for HD- InAs-InGaAs-GAA-TFET is 4.87×10
⁻⁶
A/µm, whereas Si-Ge-GAA- TFET has 3.13×10
⁻⁸
A/µm, Also, the transconductance for HD-InAs-InGaAs-GAA-TFET is 0.75 mS/µm., whereas Si-Ge-GAA-TFET has 0.39 mS/µm. This finding is compared with Si-Ge-GAA-TFET. Since III-V materials have greater carrier transport and tunneling, the new structure yields improved ON-current (I
ON
) and transconductance (gm)results.