Design and Analysis of Dielectric Materials on Gate All Around Tunnel Field Effect Transistor

In this work, Gate All Around Tunnel Field Effect Transistor (GAATFET) is analyzed for various dielectric material. The same device is characterized for different geometric and material variations. Kane's model is employed to evaluate the device characteristics of GAATFET. The electrical parameters such as ON current, OFF current, I
ON
/I
OFF
and Subthreshold swing (SS) are analyzed and tabulated in each analysis. Based on the analysis Zirconium dioxide (ZrO
2
) and Hafnium dioxide (HfO
2
) found similar characteristics for all the device parameters, further variation with all the device parameters the significant results are reported with ION 6.074×10
⁻⁹
A/um and I
OFF
8.03×10
⁻²⁰
A/um with I
ON
/I
OFF
of 7.56×10
¹¹
and the very lowest subthreshold swing of 5.627 mV /decade, threshold Voltage of 0.530 V for an operating voltage of 1 V.