I. Introduction
The first SiC MOSFET was introduced by Cree in 2011 and was housed in TO247 packaged with 1200 V rating. Adoption of SiC devices was previously limited by wafer cost and defect density. After challenges had been largely solved came the rapid growth of its MOSFET technology especially for electrical vehicle application [1] [2]. As the moment of drafting this paper, July 2022, key leading companies have released their SiC discrete MOSFETs and their SiC power modules dominantly in the intermediate voltages from 600 V to 1.7 kV such as Cree (now Wolfspeed), Infineon and ON Semiconductor. For high voltage (>3 kV), 3.3 kV seems the only choice in the industrial SiC market with a few players providing their 3.3 kV discrete MOSFETs in public domain as GeneSiC and Microchip, but it seems rarely accessible for 3.3 kV SiC power modules especially for direct public access. Further search found that the activity in this area from academia seems also limited [3] [4]. In field applications such as industrial traction and renewable energy generation, 3.3 kV voltage class is a particularly strategic one and under this background this paper presents a self-designed 3.3 kV SiC half-bridge power module conformed to Infineon XHP package, with current rating targeting at 200 A and potential switching frequency 80–100 kHz. In this paper the design structure, fabrication steps, experimental testing for partial discharge and an initial double pulse test for evaluating its functionality and switching performance will be provided. Improvement plan will also be listed in the end.