10 kV SiC thyristor for High Voltage Pulsed Power Generators

We developed a 10-kV-class high-voltage SiC thyristor for pulsed power generators which turns on without a gate signal through the displacement current to the depletion layer of a n- drift layer. The electrical characteristics of the developed SiC thyristor were determined by using device simulation. The developed SiC thyristor has a punch-through structure and thin p+ gate and n+ field stop layers. Then, SiC thyristors were fabricated, and a high breakdown voltage of ≥10 kV was confirmed. Furthermore, the developed SiC thyristor was connected in series with a 13 kV SiC metal-oxide-semiconductor field-effect transistor. Switching tests were performed in order to establish that the SiC thyristor turned on without a gate signal.