I. Introduction
The silicon (Si) based power semiconductors, such as the power MOSFETs and insulated gate bipolar transistors (IG-B Ts) have been the main solutions for applications in the power electronics domain. However, limitations with regard to high-temperature operation, switching performance and blocking voltage are obstacles against using these devices in more demanding applications. The SiC MOSFET, which was introduced in the 1990s, has come a long way since then and exhibits superior properties compared to its Si counterparts.