Verification method of the thermal interface resistance by using silicon bare-die

Materials used in semiconductor devices, especially adhesives used at the interfaces of laminated structures, are required to have high heat dissipation properties, reliability, and low void fractions. Conventional evaluation methods require a lot of time and cost to prepare samples. In this study, at the development stage of die attach materials, using a reusable silicon bare die for heat generation, interfacial thermal resistance due to voids existing in the adhesive layer was measured through transient thermal resistance measurement for a simple three-layer structure sample. An evaluation method was proposed, and the validity of this method was verified using thermal fluid simulation.