A High-IP3 Harmonic Tuned Wideband 40 dBm RF Power Amplifier for 5G Applications

This paper examines a single-ended class-AB GaN HEMT RF high power amplifier that operates in sub-6 GHz FR1 5G frequency bands such as n40 (2300MHz), n41 (2500MHz), and n7 (2600 MHz). A broadband matching network utilized for both the input and output sides of the circuit, as well as a 2nd and 3rd harmonic tuned circuit has been added to minimize interference with the fundamental tones. During a two-tones test at f
0
frequency 2500 MHz with a frequency offset of 10 MHz, the proposed design demonstrated a high OIP3 of more than 47 dBm. The proposed design was fabricated, and the results show reasonable agreement with the large-signal simulation results, with a maximum output power of 40.5 dBm and a drain efficiency of 67 percent at 2500 MHz and 400 MHz of bandwidth.