Impact of Process Induced Strain on the Sensitivity of Charge Plasma Doped TMD TFET Biosensor

In this work for the first time, we design and investigate the impact of process-induced strain on the sensitivity of a Charge Plasma TMD Tunnel FET-based dielectric modulated biosensor. Monolayer WTe2 acts as the source, channel, and drain materials in the proposed biosensor. The channel material undergoes uniaxial strain due to process-induced strain and its impact on the material characteristics has been taken advantage of to enhance the proposed biosensor's sensitivity. The Charge Plasma doping technology has been utilized to reduce costs, streamline production, and lessen random dopant fluctuations. Quantum Espresso software has been used to perform first principle calculations based on density functional theory (DFT) to determine the material's electronic characteristics. SILVACO TCAD, a 2-D device simulator has been utilized to simulate the electrical characteristics of the proposed biosensor. The proposed biosensor (for k=8) has attained a very high sensitivity of 100000. Finally, the proposed biosensor is benchmarked with contemporary 2-D material-based biosensors and it has been observed that the presented Charge Plasma TMD TFET-based biosensor has emerged to have a superior sensitivity which is ~ 3 decades higher than the maximum sensitivity reported by other alternatives.