Electrolyte-Gated WSe2 Field Effect Transistor for Dissolved Ammonia Sensing in Human Plasma

The development of a highly sensitive electrolyte gated field-effect transistor (EGFET) is based on layered transition metal dichalcogenides (TMDs). The FETs based on layered TMDs are considered as a possible alternative for biosensing applications because of their superior electrical and physical characteristics. In this work, a highly efficient few-layer WSe
2
EGFET is fabricated for dissolved ammonia detection in plasma. The sensors respond extremely well to ammonia in plasma at concentrations of 80 µM and 5 µM, respectively, with responses of 157% and 98%. These findings demonstrate the possibility of ammonia detection in human blood plasma obtained from commercial sources.