Controlled Growth of Electronic Grade 2D MoSe2-WSe2 Lateral Heterostructure and Optoelectronic Characteristics

We developed a robust water-assisted one-pot chemical vapour deposition (CVD) method for the fabrication of electronic grade 2D MoSe2 layers and MoSe2-WSe2 lateral heterostructure (LHS). Critical CVD process parameters such as carrier gas mixing, temperature, and substrate positions were varied to control the degree of crystallinity, domain sizes, and the number of the atomic layer within individual LHS domains. Raman and photoluminescence spectroscopy and transport measurement in FET geometry were used to probe the optical and electrical characteristics of these as-grown 2D LHS.