Edge-epitaxial Growth of Mos2- Ws2lateral heterostructure and their optoelectronic properties

We reported the direct growth of electronic grade 2D Mos2- Ws2lateral heterostructures (LHS) by controlling critical physicochemical parameters using a water-assisted chemical vapor deposition technique. Raman and photoluminescence spectroscopy and transport measurements were used to standardize their optical and electronic characteristics. In addition, the role of metal contacts in the transport characteristics in the field-effect transistor geometry of the LHS was evaluated.