Fabrication of Ag2S, Bi2S3 and CdS p-FETs using Solution Processing

Comprehensive study on chemically synthesized silver sulfide (Ag
2
S), bismuth sulfide (Bi
2
S
3
) and cadmium sulfide (CdS) field effect transistors (FETs) has been carried out. Physical characterization results and the in-depth electrical characterization show that fabricated devices are functioning as the p-channel FETs. At channel length of 3 mm and the gate-to-source potential of -15 V, the ON-state current of the fabricated CdS, Bi
2
S
3
and Ag
2
S p-FETs is found to be -8.5, -20.8 and -38.1 μA respectively. Furthermore, at drain-to-source potential of - 10 V, the threshold voltage of -6.1, -5.2 and -6.08 V with OFF-state current of -0.07, -0.17 and -0.27
$\mu \mathrm{A}$
is measured for CdS, Bi
2
S
3
and Ag
2
S p-FETs respectively. All the devices fabricated through simple, low-cost and industry scalable chemical route which opens a new era for fabricating the II-VI compounds (CdS), I-VI compounds (Ag
2
S) and V-VI compounds (Bi
2
S
3
) based FETs. The fabricated FETs seems to be more suited for the electrochemical sensors, optoelectronic circuits and the electronic circuit applications.