Investigation of Channel Dimension Dependence of BTI Degradation and Variation in Planar HKMG MOSFET

Degradation induced by Bias Temperature Instability (BTI) and its variation of planar HKMG NMOS and PMOS transistors having various channel width, length and finger number are measured and analyzed. The BTI degradations of NMOS and PMOS show similar trends of channel length and finger number while different trends of channel width. The impact of channel length on BTI variation also shows a new observation. The physical mechanisms resulting in these performances are explained by combination of mechanical strain and number of defects. It's revealed that multi-finger is the prior choice than wider channel to enhance the drive capability of transistors.