Simulation Analysis of High-k Dielectric Junction less FET for Reduction of Subthreshold Leakage Current

With the purpose of reduction of the subthreshold leakage current, high-k dielectric material is used, as this work demonstrates. The because of high leakage current and a sharp rise in tunneling, SiO
2
conventional MOSFET feature sizes have reached their physical limits, where reducing the oxide thickness below 2nm become not possible. Because of this, it is challenging to reduce MOSFET size and increase performance at the same time. Transistor parameters like oxide thickness channel length, and channel width can be altered instead of the transistor’s size being shrunk. The device’s performance could be impacted by these, though. Therefore, the impact of substituting another high permittivity material for SiO
2
has been studied. SiO
2
, Al
2
O
3
, HfO
2
, Ta
2
O
5
, and La
2
O
3
were among the materials employed in the analysis. SILVACO TCAD simulation was used to test the characteristic of subthreshold leakage current.