Research on Ultra-Wideband High Power Amplifier Technology

In this paper, an ultra-wideband power amplifier (PA) with an operating frequency from 0.46 GHz to 3.9 GHz is designed based on gallium nitride (GaN) high electron mobility transistor (HEMT). Firstly, the input matching network under the condition of ensuring the stability of the transistor is designed to ensure a sufficient gain. Then, by observing the power and efficiency contours through the overall load-pull, the target impedance space is obtained. And finally, a four-stage Chebyshev impedance converter is used as the output matching network. The test results show that within the operating frequency band of more than 8 octaves, the overall output power is greater than 13.8 W with the maximum output power of 24.1 W, the full-band drain efficiency is greater than 50.1% with the maximum drain efficiency of 67.2%. The measured results are in good agreement with the simulation results, which shows excellent performance.