An E-Band High-Gain LNA in 65-nm RF CMOS

This paper presents an E-band low-noise amplifier (LNA) for long-range automotive radar applications in a 65-nm RF CMOS. The four-stage LNA employs the transmission lines for source degradation and noise reduction to achieve low noise and high gain. The post-simulation results show that the LNA achieves a maximum small-signal gain (S21) of 22 dB at 79 GHz and the 3-dB bandwidth of 73.5–83.5 GHz. The noise figure (NF) is 6.8 dB at 79 GHz. The input and output return losses (S11&S22) are -28.5 dB and -20.5 dB at 79 GHz, respectively. The chip including all testing pads occupies a die area of 400 µm × 860 µm, which consumes 41 mW from a voltage supply of 1.2 V.