An 84K-295K Small Signal Circuit Model for Fin Field Effect Transistor

In this paper, an 84K- 295K small-signal circuit model for Fin Field-Effect transistor (FinFET) is proposed. This model takes non-quasi-static effect, channel length modulation effect, frequency distribution effect and substrate loss and coupling effect into account to describe the short-channel effect, high-frequency characteristics and large loss of bulk silicon process of the device. For verification, an 8-Fin 16-Finger FinFET transistor was fabricated in 14nm bulk FinFET technology. And the scattering (S) parameters were obtained from 0.2GHz to 66.2GHz at 84K, 120K, 200K, 250K, 295K. Based on the proposed model, the S parameters are computed and contrasted with the measurement data. The proposed model magnitude root-mean-square-error (RMSE) of S-parameter in 84K-295K is less than 0.018. The comparison results show that the model has high accuracy over a wide range of temperature.