Simulation Investigation of Slant Field Plate T-gate AlGaN/GaN HEMT for High-Frequency Power Applications

A slant field plate T-gate AlGaN/GaN HEMT (SFP T-gate HEMT) was proposed to improve the breakdown voltage of GaN-based millimeter-wave (mmW) devices. Simulation results verified that the peak electric field (E-field) was alleviated by the SFP with a 24% reduction than that of a conventional T-gate. Meanwhile, the SFP T-gate HEMTs demonstrated a breakdown voltage of 90V, which was twice the value of conventional T-gate HEMTs. Due to the significant improvement in breakdown voltage, the SFP T-gate HEMTs yielded higher figure-of-merits (f
T
•V
BK
=8.6THz•V and f
max
•V
BK
=29THz•V) than that of the conventional T-gate HEMTs (f
T
•V
BK
=7.5THz•V and f
max
•V
BK
= 19THz•V), illustrating its massive potential in high E-field application at millimeter-wave band.