A Filtering Ku-Band MMIC Low-Noise Amplifier for Satellite Communication

This paper presents a filtering MMIC low-noise amplifier (LNA) working at 10.8–14.8 GHz by using 0.25-μm GaAs p-HEMT technology. Three different common-source stage circuits are cascaded to achieve the desired gain with good flatness for the proposed MMIC LNA. The lower out-of-band rejection of MMIC LNA is realized by the introduced transmission zero (TZ), which can be controlled by the bypass capacitors of single common-source stage circuit. A shunt L-C tank is adopted at the drain of third transistor to form the filtering performance and boost the gain of MMIC LNA at high frequency. The designed MMIC LNA is connected to the printed circuit board (PCB) by bonding wires in the post-simulation and its simulated gain is above 22 dB from 10.8 GHz to 14.8 GHz, where the simulated noise figure (NF) is below 1.5 dB. The core area of proposed MMIC LNA is 1.3 mm × 1.8 mm including pads.