1GHz GaN MEMS Oscillator Based on GaN-on-Si MMIC Technology

The cross-coupled and Pierce MEMS oscillators using micromachined GaN Lamb wave resonator (LWR) and GaN-on-Si MMIC technology are reported in this paper. The cross-coupled oscillator operates at 1.058GHz, with the oscillator core consuming 2.53mW static power at 0.732V supply. It achieves a phase noise of -139.7dBc/Hz at 1MHz offset frequency, showing a figure of merit (FOM) level of 196.2 at 1MHz offset frequency. The Pierce type, using the same resonator, with the oscillation frequency at 1.056GHz and 7.18mW static power, has a phase noise of -169.4dBc/Hz at 1MHz and FOM level of 221.6 at 1MHz offset frequency.