A 12.87-dB Gain 10.5-dBm OPldB60-to-66-GHz LNA in 0.15-μm GaAs pHEMT Technology

This paper presents a V-band low noise amplifier (LNA) implemented in a
$\boldsymbol{0.15-\mu} \mathbf{m}$
Gallium Arsenide (GaAs) pseudomorphic high electron-mobility transistor (pHEMT) technology. The LNA adopts a three-stage common-source (CS) topology. Each transistor has a bias circuit, and the microstrip-line inductor is used to realize the input noise matching network, the interstage, and the output matching network. Circuit simulations show that our LNA scores a 12.87-dB small-signal gain, the 3-dB bandwidth ranges from 60 GHz to 66 GHz, and the current consumption is 30 mA under a 5-V supply voltage. Its noise figure is 5.9 dB, and the output 1-dB compression point is 10.5 dBm. The chip area is
$\boldsymbol{1.32}\times \boldsymbol{1.5}\mathbf{mm}^{2}$
.