Performance Variation With Changes in Ultrathin Ge Film Thickness of Self-Aligned Double-Gate Cu-MIC Low-Temperature Poly-Ge TFTs on Glass Substrates

Ge has a higher mobility and lower melting temperature than Si; hence, low-temperature poly-Ge is considered a candidate for p-channel (p-ch) thinfilm transistors (TFTs) of system-on-panels and 3D integrated CMOS circuits. In this study, we developed a low-temperature poly-Ge TFT with a low
$\mathrm{I}_{\text{off}}$
and high
$\mathrm{I}_{\text{on}}/\mathrm{I}_{\text{off}}$
ratio using a self-aligned double-gate structure on glass substrates and metal-induced crystallization using copper (Cu); accordingly, we inferred that a slight 2-nm thickness variation of the poly-Ge film altered the TFT's performance.