Dual-Float-Gate Capacitor for Low-Voltage Multi-Level Nonvolatile Memory with Enhanced Retention

Low-voltage multi-level non-volatile memory has been extensively desired to satisfy the need of the data center and neuromorphic artificial intelligent computing. In this work, n
$-\text{Si}/\text{Al}_{2}\mathrm{O}_{3}/\text{TiN}/\text{Al}_{2}\mathrm{O}_{3}/\text{TiN} /\text{Al}_{2}\mathrm{O}_{3}/\text{TiN}$
stack is proposed to represent the potential of low-voltage multi-level memory and neuromorphic computing application. It features dual metal float-gate layers to achieve low-voltage multi-level storage at
$\mathrm{V}_{\mathrm{p}}=-5\mathrm{V}$
and enhanced long-term high-temperature retention (10
⁴
s) at 85 °C.