Advanced Compact Modeling for Transistor Aging: Trap-based Approaches and Mixed-mode Coupling

In this paper, the recent advances of our studies on the compact aging modeling of bias temperature instability (BTI), hot carrier degradation (HCD) and mixed-mode transistor reliability are presented from trap-based approaches. Origins of BTI with contributions from different types of traps are identified from advanced characterization techniques. An open-source BTI model, with the industry-standard model interface OMI and the capability of capturing both degradation and recovery, has been developed for SPICE simulation and Design-Technology Co-optimization (DTCO). Three types of traps also have been identified from experiments in HCD, and a unified model has been proposed which can accurately predict HCD in full V
gs
/V
ds
bias. Finally, the mixed-mode reliability of HCD-BTI coupling, through self-heating or under off-state stress, is discussed.