Demonstration of a Junctionless Negative Capacitance FinFET-based Hydrogen Gas Sensor: A Reliability Perspective

The process induced variations like random dopant fluctuation (RDF), interface trap charge (IFT), and work function variation (WFV) can significantly affect the reliability and aging of the device. In this paper, we proposed a novel Junctionless Negative Capacitance (JLNC) FinFET, realized as a hydrogen gas sensor, and investigated its reliability aspects in terms of threshold voltage (V
TH
) variations. Owing to inherent characteristics, the NC phenomenon is employed to obtain a high-sensitivity transistor. Using a well-calibrated TCAD setup, we explored the V
TH
variation due to: (i) the metal grain size; (ii) the gas pressure, (iii) the Si-SiO
2
interface traps charges; (iv) the RDF; and (v) the ambient temperature. Finally, the device aging is evaluated, i.e., end-of-lifetime (EOL) defined as the shift of V
th
by ~50mV.