Enhance Gate Reliability and Threshold Voltage Stability of p-GaN Gate High-Electron-Mobility Transistors

Gate reliability and threshold voltage instability issues were investigated in the enhancement-mode p-GaN gate high-electron-mobility transistors (HEMTs). A n-GaN/ p-GaN gate structure is proposed to effectively reduce the gate leakage and enlarge the gate swing of the p-GaN gate HEMTs. The
$V_{\text{TH}}$
tunability and stability of the p-GaN gate HEMTs are also systematically investigated. With a p- FET bridge, wide range
$V_{\text{TH}}$
can be achieved, as well as eliminated hole-deficiency-induced
$V_{\text{TH}}$
shifts.