Relaxation of conductance during DC voltage pulse off time in TiN/Hf/HfOx/Au/ HfOx/ TiN –device

We measured conductance change of the TiN/Hf/HfOx/ Au/HfOx/TiN device by applying voltage pulses, and investigated pulse off time dependence of conductance change. There was a recovery of conductance during pulse off, and conductance change is dependent on the pulse off time. We estimated the relaxation time of the recovery process. It may be concluded that the amount of resistance change is dependent on the pulse off time, and we can choose a desired condition of conductance change rate suitable for artificial synapse.