Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode

Semiconductor devices failed by cosmic radiation have not been analyzed as extensively and systematically as ESD/EOS. In this paper, the SEB phenomena by irradiation stress is not sufficiently explained by the existing method, so we supplemented it to explain the failure mechanism. For this reason, the fail region was analyzed in detail, and based on the analyzed result, the failure phenomenon in a wide area was analyzed, and this was reflected and explained by applying it to the TCAD simulation.