Design and demonstration of Cu/Al2O3 /Cu RRAM with complementary resistance switching characteristic

To overcome the crosstalk problem originating from the sneak path current, a simple structure of
$\text{Cu}/\text{Al}_{2}\mathrm{O}_{3}$
/Cu memristor was fabricated in this paper. Results showed that the device presented good bipolar resistive switching characteristic (BRS) as well as the endurance and retention performance. Most importantly, the complimentary resistance switching characteristic (CRS) appeared in this device by adjusting the testing parameters, which is important in crossbar array applications.