EUV lighting by the cold cathode C-beam irradiation technique

EUV lithography has been introduced for high-volume manufacturing in the semiconductor industry. The recent development of EUV lightings with a wavelength of 13.5 nm has extended semiconductor technology to a node region of several nanometers. The EUV is generated by the C-beam irradiation, which is controlled by the C-beam structure, incident angle of the electron, anode voltage, and anode current.