Negative-Thermal-Expansion Gate Electrode to Introduce Tensile Strain into the Channel of MOSFETs for Mobility Enhancement

Herein, the use of a negative-thermal-expansion (NTE) material as a gate electrode to introduce a large tensile strain into a MOSFET channel is proposed. Manganese nitride (MnN), which has an antiperovskite crystal structure, is an NTE material. MOSFETs with a MnN gate as the negative-thermal-expansion gate electrode (NTEG) are fabricated and evaluated. MOSFETs with an NTEG exhibit a 10% increase in electron mobility. The results indicate that the NTEG is promising as a mobility enhancement technology.