Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates

In this paper, the correlation between the measured TLP results and HBM-ESD results was quantitatively revealed by using a proposed TLP-ESD comparison lookup diagram. By comparing the characteristics of the GaAs-based device with those of the Si-based device, the differences based on the electro-thermal characteristics of the substrate were quantitatively compared and analyzed in terms of ESD layout area, physical failure, and TCAD simulation.