DC and Transient Microscopic Simulation of Nanowire NMOSFETs

Algorithms for solving the Poisson, Schrödinger and Boltzmann transport equations under cryogenic conditions and at room temperature are presented. The Boltzmann transport equation is stabilized with Godunov's method after a transformation onto the total energy resulting in excellent numerical stability regardless of the strength of scattering. DC and transient electron transport in nanowire NMOSFETs can be investigated. The simulated subthreshold swing is free of numerical artifacts and agrees well the theoretical result.