Numerical Evaluation of the Gate Stacked GNR FET for improved Device Switching

The performance evaluation of nanoscale transistors is a complex phenomenon challenging the fabrication of various components of the integrated chips. In the present study, digital parameters of the graphene-based nanoribbon field-effect transistor (GNR FET) are investigated along with the gate stacked GNR FET, i.e., GS-GNR FET with gate stacking of lanthanum aluminate and silicon dioxide. The proposed device is simulated in Quantum ATK SE using the Slater-Koster method without SCF iteration followed by the non-equilibrium Green's function (NEGF). The gate stacking improves the device's performance by reducing the off-state current
$(\mathbf{I}_{\mathbf{off}})$
and improving the device's switching ratio
$(\mathbf{I}_{\mathbf{on}}/\mathbf{I}_{\mathbf{off}})$
. Further, the subthreshold swing (SS) is reduced by 12% in the GS-GNR FET over GNR FET, portraying improved channel control and switching with less leakage current. The results show that the GS-GNR FET is an excellent replacement for the GNR FET in designing IC components in the electronics industry.