Characteristics analysis and development trend overview of solar cells

With the global warming and the exhaustion of fossil fuels, the development and utilization of clean energy is urgent. Solar energy as the easiest to collect clean energy, compared with wind energy and other clean energy has great advantages and practical research significance. The space electric field region formed at the interface between two kinds of semiconductors formed by different doping methods of P-type semiconductor and N-type semiconductor is called PN junction, which is also the basic structure of solar cells. In this paper, the basic principles of diffusion and drift of PN junction are explained by formula and graph inference. The spatial electric field region formed at their interface by diffusion between two semiconductors formed by different doping methods of p-type semiconductors and n-type semiconductors is called the PN junction, which is also the basic structure of solar cells. This article uses formulas and pictures to reason and illustrate the basic principles of diffusion and drift of pn junctions. The solar cell characteristics were analyzed using simulation software. Among them, the open circuit voltage and short circuit current of solar cells are mainly analyzed by combining the voltage and current curves, the characteristics of the filling coefficient of solar cells are analyzed by using formulas, and finally the theoretical efficiency of solar cells is analyzed by using simulation results. At the same time, based on the actual situation, the efficiency changes of three common solar cells, namely Silicon Solar Cell, Thin-film Solar Cell and III-V Solar Cell, were analyzed and compared through the change of the year. The following paper gives the current technical limitations of solar cells and the prospect of future solar cells.