Enhanced Performance Parameters of Magnetic Tunnel Junction with Composite Dielectric Barrier

A promising area for developing devices beyond conventional metal-oxide-semiconductor (CMOS) technology is spintronics, which uses the spin degree of electrons as the information vector. The advent of 2-dimensional materials has given spintronic devices unique platforms, and numerous innovative and novel application concepts have been presented. This article evaluates the effect of adding composite dielectrics (ZrO2 or TiO
2
or Ta
2
O
5
) to the MgO dielectric layer to create a MgO-ZrO
2
/TiO
2
/Ta
2
Os-MgO composite dielectric layer. Non-equilibrium Green's function (NEGF) driven simulator is used to run the simulations. The important transport properties of the MTJ, such as the anti-parallel and parallel resistances, anti-parallel and parallel differential resistances, TMR, differential TMR, and both the out-of-plane and in-plane spin transfer torques (STT) have been calculated using simulator based on NEGF quantum transport. To examine the reliability and performance of the MTJ model under the temperature variation, the temperature-related analysis of TMR has been analyzed for both the conventional and proposed MTJ models. Interestingly, the maximum TMR at 13 K and at room temperature is obtained for the Tu
2
O
5
-based composite dielectric MTJ model, with 549% and 282% respectively. Hence, the design of the MTJ memory with a Taz
2
O
5
-based composite dielectric composition is found to be superior.