Theroretical Modelling of Zinc Diffusion for InGaAs/InP Planar Avalanche Photodiode

Zinc (Zn) diffusion is a critical process for the fabrication of InGaAs/InP planar avalanche photodiodes (APDs). In this paper, we built up a Zn diffusion model to calculate Zn diffusion profile for InGaAs/InP material system. The corresponding InGaAs/InP planar APD device model was also established and the impact of Zn diffusion depth on APD performances was analyzed. The simulation results show a good agreement with experiment data. Our model can be exploited to optimize planar APD performances for future work.